In2te3 ferroelectric
WebOct 6, 2024 · In the In 2 Te 3 monolayer, each unit cell consists of two In atoms and three Te atoms, which are arranged in the sequence of Te–In–Te–In–Te [ 38, 45 ]. The calculated lattice parameters of the In 2 Te 3 monolayer are determined to be a = b = 4.37 Å, which also coincides well with previous findings [ 38 ]. WebThe stable ferroelectricity of 2D α In 2 Se 3 is attributed to its unique re-bonding mechanism and the locking between polarizations in the OOP and IP directions, rather than the long-range Coulomb interactions in conventional displacement-type ferroelectrics.
In2te3 ferroelectric
Did you know?
WebOct 30, 2024 · Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α -In 2 Se 3 /WSe 2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small ... WebFeb 18, 2024 · By using first-principles calculations, we predict that hole-doping can induce robust ferromagnetism in 2D ferroelectric {\alpha}-In2Se3 due to its unique flat band …
WebDec 31, 2011 · Abstract and Figures The objective of this research was simulated the electronic structure of In2Te3 thermoelectric material by using discrete variational-Xα (DV-Xα) cluster models method based... WebJan 1, 2005 · It was claimed that the resistivity of III–VI semiconductors (Ga 2 Te 3 and In 2 Te 3) decreases abruptly under hydrostatic pressures between 1 and 7 GPa. The …
WebJun 1, 2024 · Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film … WebOct 6, 2024 · Generally, the strain resulting from the lattice mismatch may affect the electronic structures of the graphene/In 2 Te 3 heterostructures. For comparison, the …
WebBy alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.", author = "Gangjian Tan and Zeier, {Wolfgang G.} and Fengyuan Shi and Pengli Wang and Snyder, {G. Jeffery} and Dravid, {Vinayak P.} and Kanatzidis ...
WebJun 16, 2024 · Here we report the experimental demonstration of 2D ferroelasticity in vdW β’ -In 2 Se 3 down to few-layer thickness. As a III 2 -VI 3 compound semiconductor, In 2 Se 3 … darpa tactical technologyWebFeb 9, 2024 · Indium selenide (In 2 Se 3) is an attractive layered semiconductor material with promising optoelectronic and piezoelectric applications. In this work, single-crystalline α -In 2 Se 3 nanobelts are synthesized using a catalyst-free chemical vapor deposition method through the direct selenization of In 2 O 3 powders. darpa synthetic biologyWebWhen the out-of-plane ferroelectric polarization field is pointing from In 2 Se 3 towards MoS 2, the energy band of the heterostructure is type-II band alignment with a band gap of 0.8 eV, which is beneficial for carrier separation. With reversal of the ferroelectric polarization, the band alignment switches from type-II to type-I with a band ... darpa started facebookWebA theoretical design for an ON–OFF switchable HER catalyst using the two-dimensional ferroelectric (2D-FE) III 2 VI 3 compound In 2 Se 3 is reported in this paper. With vertical stacking of the basal plane of In 2 Se 3 on top of the transition metal cobalt, a set of ab initio calculations reveals that the reversible polarization switching of In 2 Se 3 can turn the … bison bookstoreWebJan 1, 2005 · In the present paper, measurements of the electrical conductivity, the Hall coefficient and the dielectric constant in Ga 2 Te 3 was reported. Our main conclusions were: 1. Ga 2 Te 3 crystal is a promising n-type semiconductor. 2. The energy gap for that compound is 1.21 eV, while the activation energy of donors is 0.11 eV. 3. darpa thermal targets human beingsWebSep 9, 2024 · In addition, an abnormal resistive switching phenomenon in α-In 2 Se 3 is reported when operated in the in-plane ferroelectric switching mode. The findings pave … bison board price in bangaloreWebJan 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be... darpa therapy acoustic